Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device.

Nanomaterials (Basel) · 2021 · PMC7911158 · PMID 33513672

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closest p

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a decreasing trendno p-value reported

Figure 2 b shows endurance with the variation of current at a read voltage of 0.2 V with a decreasing trend of LRS after about 85 cycles.

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