High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits.

In addition, by plotting the fitted κ 0 /2 π as a function of the resonance wavelength measured from 1260 nm to 1630 nm, a weak trend showing a larger κ 0 /2 π at a shorter wavelength is observed (see Supplementary Information ).

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