Multifunctional computing-in-memory SRAM cells based on two-surface-channel MoS<sub>2</sub> transistors.

iScience · 2021 · PMC8487024 · PMID 34632334

Europe PMC DOI

hedged sentence

—

closest p

—

boldest claim

The sentences

a decreasing trendno p-value reported

In addition, as V ds gradually changes from −2.2 V to −1.7 V, the current I ds shows a decreasing trend.

also in 47,180 other papers

Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.