Interface Optimization and Transport Modulation of Sm<sub>2</sub>O<sub>3</sub>/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer.

Nanomaterials (Basel) · 2021 · PMC8705081 · PMID 34947792

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a decreasing trendno p-value reported

For S2 and S3, the contents of In(PO 3 ) 3 and In 2 O 3 shows a decreasing trend, indicating that the ALD-derived Al 2 O 3 passivation layers prior to Sm 2 O 3 deposition can significantly prohibit the formation of In and P suboxides, which can be attributed to the interface cleaning function of plasma O 2 [ 21 ].

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an increasing trendno p-value reported

With the increase of ΔE, the value of D it shows an increasing trend.

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