Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors.

For experimental group A, as t ZnO increased from 10 to 40 nm, the carrier number in the ZnO layer increased and the V hump was negatively shifted; thus, V hump –V ON presented a decreasing trend, and the hump was weakened.

also in 47,180 other papers