Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation.

Micromachines (Basel) · 2022 · PMC9032452 · PMID 35457921

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an increasing trendno p-value reported

According to the simulation results, N GA ( O i ) exhibited an increasing trend for a-IGZO TFTs with various N-doping ratios under the PBS process, as shown in Table 2 .

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