Interface chemistry modulation and dielectric optimization of TMA-passivated HfDyO _<i>x</i> /Ge gate stacks using doping concentration and thermal treatment.

However, as the annealing temperature continues to increase, there is an increasing trend for the Ge 1+ , Ge 2+ and Ge 3+ content and a decreasing trend for the Ge 4+ content, indicating that higher temperature annealing favors an increase in the interface stability.

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