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Effects of Ga substitution on electronic and thermoelectric properties of gapless semiconductor V<sub>3</sub>Al.

RSC Adv · 2019 · PMC9060434 · PMID 35518079

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an increasing trendno p-value reported
It is obvious that the value of B shows an increasing trend as the doping concentration increases from 0 (V 3 Al) to 1 (V 3 Ga), indicating that it is more and more difficult to compress the listed compounds.

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