3(a), (b) and (c), (d) , for which we deal with an increasing trend of EHC Max. for SiC and h-BN with gμ B B / t p z as well as we deal with decreasing trends for all structures in the case of PSPS Max. .
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Schottky anomaly and Néel temperature treatment of possible perturbed hydrogenated AA-stacked graphene, SiC, and h-BN bilayers.
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