With increasing concentration of H 2 O 2 from 0.17 M to 1.4 M (C1–C4) the cell potential shows a slightly increasing trend.
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Reaction control of metal-assisted chemical etching for silicon-based zone plate nanostructures.
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With increasing concentration of H 2 O 2 from 0.17 M to 1.4 M (C1–C4) the cell potential shows a slightly increasing trend.