Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition.

RSC Adv · 2018 · PMC9086866 · PMID 35548656

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a decreasing trendno p-value reported

Furthermore, the Δ V TH showed a decreasing trend with an increase in the contents of incorporated Hf.

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an increasing trendno p-value reported

When the incorporated Hf cycle number was varied from 8 to 4, the final σ c values of the HAZO thin films showed an increasing trend.

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