High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In<sub>2</sub>O<sub>3</sub> channel layers.

RSC Adv · 2022 · PMC9115870 · PMID 35702432

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a decreasing trendno p-value reported

67 Observably, compared with the pure In 2 O 3 TFT, the normalized drain current noise spectral density ( S ID / I D 2 ) of GQDs-In 2 O 3 -2 TFT presents a decreasing trend, indicating that the average trap density and interface trap density for the In 2 O 3 -based TFT are reduced after GQDs doping.

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