Interface Analysis of MOCVD Grown GeTe/Sb₂Te₃ and Ge-Rich Ge-Sb-Te/Sb₂Te₃ Core-Shell Nanowires.

Such an observed trend may be related to the Ge atoms from the core NWs bonded with Sb atoms from the shell of NWs at the core–shell interface, supported by the tendency to form Ge–Sb bonding to reduce the overall potential energy of the alloy.

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