As for the GeSi system, when imposing the biaxial strain, the absolute |ΔG H* | values for T Si and T Ge sites can uniformly show a decreasing trend, regardless of biaxial compressive or tensile strain.
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Theoretical Study on the High HER/OER Electrocatalytic Activities of 2D GeSi, SnSi, and SnGe Monolayers and Further Improvement by Imposing Biaxial Strain or Doping Heteroatoms.
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