Development of MEMS Process Compatible (Bi,Sb)₂(Se,Te)₃-Based Thin Films for Scalable Fabrication of Planar Micro-Thermoelectric Generators.

Given that the thermal energy (k B T) available at 300 K is 0.026 eV and thus insufficient to excite carriers across the small bandgap of BiSbTe, we expect to see a decreasing trend, as in the case of high resistivity and glass substrates, assuming that phonon-induced carrier scattering is dominant.

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