Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance.

Materials (Basel) · 2022 · PMC9570876 · PMID 36234102

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an apparent trendno p-value reported

Although the electrical properties significantly changed with respect to the In concentration, an apparent trend depending on the In concentration was not observed in the structural properties of the IZO film.

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