When the applied V bgs changes from −25 V to −40 V and the load has been fixed at 5 g, the percentage change of I ds ((Δ I ds / I ds )%) has been observed with a decreasing trend as V bgs becomes more negative (see inset of Figure 3 a).
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Mixed Dimensional ZnO/WSe<sub>2</sub> Piezo-gated Transistor with Active Millinewton Force Sensing.
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