High frequency characterization of Si 3 N 4 dielectrics for artificial magnetoelectric devices.

In ferroelectric oxide materials, which have typically modest energy band gaps, the density of extrinsic charge carriers may be significant to induce accumulation or depletion layers at the interface [ 32 ] and stabilise ferroelectric order at ultrathin thicknesses by screening the depolarising field associated with the ferroelectric polarisation [ 35 ].

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