Tunable electronic properties and related functional devices for ferroelectric In₂Se₃/MoSSe van der Waals heterostructures.

The E g values of the four models showed a decreasing trend under the biaxial stretch strain in Fig. 6(b) , and it was noticeable that the E g of M3(M4) reached zero when the stretch strain ε ≥ 2%, and it decreased to zero under 6%–8% strain for M3.

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