Investigation into SiO<sub>2</sub> Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled.

Nanomaterials (Basel) · 2022 · PMC9781520 · PMID 36558310

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an increasing trendno p-value reported

Although the neutral to ion flux ratio slightly decreased in the 0.1 ms pulse-off time condition compared to the continuous wave discharge, it shows an increasing trend with extending pulse-off time.

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