CMP Pad Conditioning Using the High-Pressure Micro-Jet Method.

Micromachines (Basel) · 2023 · PMC9866616 · PMID 36677261

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Analysis of Results Observe in Figure 6 that the MRR of the SiC wafers first showed an increasing trend and then a decreasing trend with increasing use time when the polyurethane polishing pad was used in the CMP experiments with the diamond conditioner; the overall removal rate was in the range of 1.80–4.14 μm/h.

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