Fabrication of Aluminum Oxide Thin-Film Devices Based on Atomic Layer Deposition and Pulsed Discrete Feed Method.

Micromachines (Basel) · 2023 · PMC9967533 · PMID 36837979

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an increasing trendno p-value reported

As the film thickness increases from 52 nm to 126 nm, it is found that the tensile stress of the Al 2 O 3 film has an increasing trend.

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