Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs.

The Micro-LEDs without sidewall passivation showed a trend that the peak EQE decreases gradually for the devices smaller than 40 × 40 μm, while sol-gel SiO 2 sidewall passivation had a distribution of the peak EQEs between 28.1% and 25.8% with relatively small variation [ 19 ].

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