Evolution of type-II hetero-strain cylindrical-gate-all-around nanowire FET for exploration and analysis of enriched performances.

Sci Rep · 2023 · PMC10349044 · PMID 37452048

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quite significantno p-value reported

Device A also provides 3.7% decrement in subthreshold swing and 227% enhancement in I on /I off ratio when compared to IRDS 2022 for the 3 nm technology node, which is quite significant and is exceedingly augmented in contrast to Si-only Device G.

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