Enhancing the Plasma-Resistance Properties of Li2O-Al2O3-SiO2 Glasses for the Semiconductor Etch Process via Alkaline Earth Oxide Incorporation.

Materials (Basel) · 2023 · PMC10384723 · PMID 37512386

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showed a trendno p-value reported

The change in the Li–F/Li–O ratio showed a trend almost similar to the etch rate in Figure 6 .

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Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.

Enhancing the Plasma-Resistance Properties of Li<sub>2</sub>O-Al<sub>2</sub>O<sub>3</sub>-SiO<sub>2</sub> Glasses for the Semiconductor Etch Process via Alkaline Earth Oxide Incorporation.

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