Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing.

Discov Nano · 2023 · PMC10409712 · PMID 37382679

Europe PMC DOI

hedged sentence

—

closest p

—

boldest claim

The sentences

quite significantno p-value reported

Such type of switching is quite significant in neuromorphic applications which require an accurate conductance change.

also in 5,695 other papers

Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.