Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications-Effects of Precursor and Operating Conditions.

Materials (Basel) · 2023 · PMC10456286 · PMID 37629812

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a clear trendno p-value reported

We can observe a clear trend in resistance increase with thickness for the TiCl 4 precursor while the resistance of the layers deposited from TDMA-Ti remains in the range of 170–250 Ω/sq.

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