Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor.

ACS Omega · 2023 · PMC10500691 · PMID 37720771

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closest p

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a clear trendno p-value reported

A clear trend in the improvement of the surface smoothness as well as the FWHM of the GaAs peak (obtained with ω-RC scan) can be noticed, which follows an increase of As flux from process to process.

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