Demonstration of 10 nm Ferroelectric Al<sub>0.7</sub>Sc<sub>0.3</sub>N-Based Capacitors for Enabling Selector-Free Memory Array.

Materials (Basel) · 2024 · PMC10856568 · PMID 38591456

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a clear trendno p-value reported

These results show a clear trend that a shorter pulse rise time enables a larger memory window.

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