Bandgap Engineering via Doping Strategies for Narrowing the Bandgap below 1.2 eV in Sn/Pb Binary Perovskites: Unveiling the Role of Bi<sup>3+</sup> Incorporation on Different A-Site Compositions.

Nanomaterials (Basel) · 2024 · PMC11478006 · PMID 39404281

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hedged sentence

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closest p

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boldest claim

The sentences

quite significantno p-value reported

Nevertheless, this study has identified the lowest bandgap (~1360 nm, 1.055 eV) that can be achieved in a single halide perovskite with an ABX 3 structure, which is quite significant.

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