Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress.

Micromachines (Basel) · 2025 · PMC11767926 · PMID 39858757

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a clear trendno p-value reported

A clear trend emerges, where SCWT decreases as V DS increases, attributed to enhanced power dissipation and accelerated thermal runaway.

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