Physisorption-assistant optoelectronic synaptic transistors based on Ta2NiSe5/SnS2 heterojunction from ultraviolet to near-infrared.

Light Sci Appl · 2025 · PMC11911395 · PMID 40091114

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In the future, gas adsorption-assisted optoelectronic synaptic devices are expected to handle different types of stimuli and are becoming an important trend in sensing technology aiming at better recognition accuracy and robustness.

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Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.

Physisorption-assistant optoelectronic synaptic transistors based on Ta&lt;sub&gt;2&lt;/sub&gt;NiSe&lt;sub&gt;5&lt;/sub&gt;/SnS&lt;sub&gt;2&lt;/sub&gt; heterojunction from ultraviolet to near-infrared.

The sentences

Physisorption-assistant optoelectronic synaptic transistors based on Ta<sub>2</sub>NiSe<sub>5</sub>/SnS<sub>2</sub> heterojunction from ultraviolet to near-infrared.