Resetting the Drift of Oxygen Vacancies in Ultrathin HZO Ferroelectric Memories by Electrical Pulse Engineering.

Although a clear trend is not present, a reduction of the gap (Δ P normalized < 1) is present for all PUND‐reset pulsed devices, with the 0.5 ms 0.3 V reset pulse showing the optimal reduction, with a remarkable ≈20% of the gap (Δ P normalized = 0.21) otherwise obtained by the standard PUND pulse. 2.2 In situ Photolu

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