Fabrication and Optoelectronic Properties of Advanced Quinary Amorphous Oxide Semiconductor InGaZnSnO Thin Film.

Materials (Basel) · 2025 · PMC12072813 · PMID 40363591

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a clear trendno p-value reported

From Figure 3 b, it is observed that the average visible light transmittance of IGZTO thin films does not follow a clear trend within the argon gas flow rate range of 20~60 sccm, with values of 90.62%, 89.92%, 90.56%, 90.21%, and 89.56%, respectively.

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