Single-photon emitters in PECVD-grown silicon nitride films: from material growth to photophysical properties.

Nanophotonics · 2025 · PMC12133249 · PMID 40470095

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a clear trendno p-value reported

The available data does not yet reveal a clear trend in emission stability as a function of the NH 3 /SiH 4 ratio, though emitters in the samples grown at the lower ratio R are more susceptible to photobleaching.

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