Research on the Short-Circuit Characteristics of Trench-Type SiC Power MOSFETs Under Single and Repetitive Pulse Strikes.

The on-resistance R ds also shows an increasing trend with the increase in short-circuit stress, from the initial 82.08 mΩ to 84.34 mΩ, and the degradation trend is the same as that at the 5 μs short-circuit pulse stress.

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The trend is insignificant for V gs of 15 V, but there is a clear trend in the gate voltage from 3 V to 0 V for the 18 V gate failure.

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The value shows a decreasing trend from the initial 3.95 V to 3.62 V.

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