The carrier concentration, shown in Figure S9a , varies between 1 × 10 20 and 3 × 10 20 cm –3 , but it does not exhibit a clear trend with respect to the Te content in the system.
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Controlling the Order-Disorder Transition Temperature through Anion Substitution in CuCr<i>X</i> <sub>2</sub> (<i>X</i> = S, Se, Te).
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The transition temperature was found to be highly composition-dependent, exhibiting a decreasing trend with the incorporation of larger anions; CuCrSe 1.85 Te 0.15 had the lowest T c at 282 K, which is the lowest reported T c to date for bulk samples in this crystal structure type.