The Influence of the Ar/N<sub>2</sub> Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices.

Materials (Basel) · 2025 · PMC12429613 · PMID 40942363

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a clear trendno p-value reported

A clear trend of increasing titanium content relative to nitrogen was observed with decreasing Ar rate flow, which correlated with a shift in the zero-crossing wavelength of the real part of relative permittivity and was further supported by chemical composition analysis.

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The Influence of the Ar/N&lt;sub&gt;2&lt;/sub&gt; Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices.

The sentences

The Influence of the Ar/N<sub>2</sub> Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices.