Recent progress in aluminum nitride for piezoelectric MEMS mirror applications: enhancements with scandium doping.

Microsyst Nanoeng · 2025 · PMC12479902 · PMID 41022712

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a clear trendno p-value reported

84 examined Cl 2 -based ICP etching of AlN, Al 0.98 Sc 0.02 N, and Al 0.84 Sc 0.16 N, observing a clear trend of decreasing etch rate with higher Sc content, as shown in Fig. 4a .

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