Optimizing Annealing Temperature for Enhanced Electrical Performance and Stability of Solution-Processed In<sub>2</sub>O<sub>3</sub> Thin-Film Transistors.

As shown in Figure 5 , a decreasing trend in resistivity was observed with increase in the annealing temperature.

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Overall, the AFM analysis demonstrates a clear trend of increasing surface roughness with increasing annealing temperature, suggesting that high-temperature thermal treatment enhances crystallization and induces stress-driven morphological evolution [ 17 , 18 ].

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