6 , the extracted N B values over the tunneling depth range ( x ~ 1.1–1.4 nm) show a decreasing trend with shorter channel lengths, and this trend appears more noticeable in the device with L = 3 μm compared to those with L = 12 μm and 20 μm.
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Analysis of physical mechanisms for channel-length-dependent PBTS reliability in SA TG coplanar IGZO TFTs.
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The sentences
The C-V analysis revealed a clear trend: the subgap DOS in the IGZO channel decreased as the channel length was reduced.