Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β‑Ga2O3 (001) Trench Schottky Barrier Diodes Using H3PO4 Treatment.

ACS Appl Electron Mater · 2026 · PMC13019671 · PMID 41908978

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a clear trendno p-value reported

The plot of %Δ R on / R on vs stress and recovery time in Figure b shows a clear trend of increasing specific on-resistance ( R on,sp ) under negative-bias stress, followed by partial recovery during the relaxation period.

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Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.

Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β‑Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; (001) Trench Schottky Barrier Diodes Using H&lt;sub&gt;3&lt;/sub&gt;PO&lt;sub&gt;4&lt;/sub&gt; Treatment.

The sentences

Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β‑Ga<sub>2</sub>O<sub>3</sub> (001) Trench Schottky Barrier Diodes Using H<sub>3</sub>PO<sub>4</sub> Treatment.