A Liquid Ge(IV) Precursor for Low Temperature Plasma Enhanced Atomic Layer Deposition of Germanium Oxide Thin Films.

As shown in Table 2 , there is a slight trend toward decreased roughness at elevated temperatures, likely due to enhanced surface diffusion of precursor molecules during film growth.

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Without this outlier, n follows a clear trend, demonstrating that the refractive index can be systematically tuned by adjusting deposition parameters, consistent with previous findings in the literature [ 33 ].

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