Figure 3b presents the simulation results of V O distributions in the LRS after SET switching, in which the E a of the IL ( E a, IL ) were set to 0.42 eV (−40% of 0.70 eV of E a , HfO2 ), 0.56 eV (−20%), 0.84 eV (+20%), and 0.98 eV (+40%) to investigate a clear trend of the E a modulation.
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