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3-Tier CFET 6T-SRAM with 2D-TMDs channels for Angstrom technology node.

Sci Rep · 2026 · PMC13230523 · PMID 41963381

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a clear trendno p-value reported
Within the 3-Tier models, a clear trend emerges where a weaker PU transistor (2P) leads to a faster WAT.

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