Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials.

Nanoscale Adv · 2026 · PMC13244893 · PMID 42266178

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a clear trendno p-value reported

These factors together result in a clear trend of decreasing energy relaxation rates from GaN/AlN to GaSb/InAs finite- and infinite-square potential QW heterostructures.

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