Improving UV Stability of SiO<sub>2</sub>/SiN<sub>x</sub>-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth.

Sensors (Basel) · 2026 · PMC13364108 · PMID 42451236

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a clear trendno p-value reported

As discussed in the previous section, variations in oxide thickness within this general range did not produce a clear trend in the induced-junction devices studied here, suggesting that the improved behaviour of the regrown-oxide device is unlikely to arise from oxide thickness alone.

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Improving UV Stability of SiO&lt;sub&gt;2&lt;/sub&gt;/SiN&lt;sub&gt;x&lt;/sub&gt;-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth.

The sentences

Improving UV Stability of SiO<sub>2</sub>/SiN<sub>x</sub>-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth.