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Computational simulation of the effects of oxygen on the electronic states of hydrogenated 3C-porous SiC.

Nanoscale Res Lett · 2012 · PMC3462725 · PMID 22913486

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a clear trendno p-value reported
The energy gap increases as the number of O atoms increases in the supercell if the O atoms are bridge-bonded, whereas the band gap energy does not exhibit a clear trend if O is double-bonded to the surface.

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