Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures.

Sci Rep · 2016 · PMC4768181 · PMID 26916050

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showed a trendno p-value reported

At lower temperatures (305 and 315 K), the I-V showed a trend similar to that of the space charge limited current (SCLC), i.e., at a low (absolute) voltage, the slope was close to 1, but as the voltage increased (as the carrier injection increased), the slope became close to 2, due to interactions between the trapped carriers 21 36 37 38 .

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