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Growth mechanism of epitaxial YSZ on Si by Pulsed Laser Deposition.

Sci Rep · 2018 · PMC5893595 · PMID 29636484

1
hedged sentence
closest p
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The sentences

a clear trendno p-value reported
2 show a clear trend in crystalline properties depending on the pO 2 at 2*10 −2 mbar Ar during initial growth.

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